Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules-Reference-Cited by-同舟云学术

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Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules

Published:2020-10-11 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Energy Conversion Congress and Exposition (ECCE)
language:
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Author:

Mocevic Slavko,Mitrovic Vladimir,Wang Jun,Burgos Rolando,Boroyevich Dushan,Jaksic Marko,Teimor Mehrdad

Funder

U.S. Department of Energy

Vehicle Technologies Office

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9235288/9235325/09235607.pdf?arnumber=9235607

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4. A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development;IET Power Electronics;2023-05-17

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