Design of 1500V/200kW 99.6% Efficiency Dual Active Bridge Converters Based on 1700V SiC Power MOSFET Module

Author:

Xu Wei,Yu Rui yang,Guo Zhicheng,Huang Alex Q.

Funder

Office of Energy

Publisher

IEEE

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Extreme high efficiency enabled by silicon carbide (SiC) power devices;Materials Science in Semiconductor Processing;2024-03

2. Comparative Study on Reliability and Application Features of SiC MOSFET;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

3. High Power Converter Busbar in the New Era of Wide-Band-Gap Power Semiconductor;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

4. A Cost Effective Gate Drive Circuit for Improved Switching Performance in SiC Traction Inverters;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

5. 13.8kV/400kW Solid State Transformer DC Fast Charger (SST-DCFC) Based on 15kV SiC AC Switch;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

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