Electromigration characteristics of TiN barrier layer material-Reference-Cited by-同舟云学术

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Electromigration characteristics of TiN barrier layer material

Published:1995-06 Issue:6 Volume:16 Page:230-232
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jiang Tao ,Cheung N.W.,Chenming Hu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/17196/00790718.pdf?arnumber=790718

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of CMOS compatible titanium nitride-based microheater for microthrusters;ISSS Journal of Micro and Smart Systems;2022-03-09

2. Stability and Reliability of Ti/TiN as a Thin Film Resistor;ECS Journal of Solid State Science and Technology;2012-11-14

3. Electrical and Reliability Characterization of Ti/TiN Thin Film Resistor;ECS Transactions;2012-04-27

4. Grain size softening in nanocrystalline TiN;International Journal of Refractory Metals and Hard Materials;2005-07

5. Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers;Solid-State Electronics;2001-07

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