Radiation-hardened silicon-on-insulator junction field-effect transistors fabricated by a self-aligned process
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Published:1987-03
Issue:3
Volume:8
Page:101-103
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:
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Short-container-title:IEEE Electron Device Lett.
Author:
Choi H.K.,Bor-Yeu Tsaur ,Chen C.K.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials