A Terahertz Monostatic Transceiver in 90-nm SiGe BiCMOS
Author:
Affiliation:
1. Institute for Communications Engineering and RF-Systems, Johannes Kepler University Linz, Linz, Austria
2. Infineon Technologies AG, Neubiberg, Germany
Funder
European Commission's Electronic Components and Systems for European Leadership
Austrian Research Promotion Agency
Joint JKU-LIT-SAL mmWave Lab
Silicon Austria Labs
Johannes Kepler University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Radiation
Link
http://xplorestaging.ieee.org/ielx7/5503871/10381491/10305429.pdf?arnumber=10305429
Reference16 articles.
1. Terahertz Imaging and Sensing Applications With Silicon-Based Technologies
2. A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications
3. A 1.42-mm2 0.45–0.49 THz Monostatic FMCW Radar Transceiver in 90-nm SiGe BiCMOS
4. A 0.32-THz 6.6-dBm Single-Chain CW Transmitter Using On-Chip Antenna With 2.65% DC-to-THz Efficiency
5. Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology
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