Lossless Matching Layer for Silicon Lens Arrays at 500 GHz Using Laser Ablated Structures
Author:
Affiliation:
1. Electronic Circuits and Architectures group, Delft University of Technology, Delft, The Netherlands
2. Terahertz Sensing Group, Delft University of Technology, Delft, The Netherlands
3. Veld Laser Innovations B.V., ‘S-Heerenberg, The Netherlands
Funder
ERC Starting
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Radiation
Link
http://xplorestaging.ieee.org/ielx7/5503871/9942281/09868802.pdf?arnumber=9868802
Reference27 articles.
1. UWB, Non Dispersive Radiation From the Planarly Fed Leaky Lens Antenna—Part II: Demonstrators and Measurements
2. Development of Multi-Layer Anti-Reflection Structures for Millimeter-Wave Silicon Optics Using Deep Reactive Ion Etching Process
3. 16:1 bandwidth two-layer antireflection structure for silicon matched to the 190–310 GHz atmospheric window
4. Anti-reflection coatings for submillimeter silicon lenses;wheeler;Proc SPIE,2014
5. Large-aperture wide-bandwidth antireflection-coated silicon lenses for millimeter wavelengths
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