Radiation hardening of power MOSFETs using electrical stress-Reference-Cited by-同舟云学术

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Radiation hardening of power MOSFETs using electrical stress

Published:2000-06 Issue:3 Volume:47 Page:641-646
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Picard C.¹,Brisset C.,Quittard O.,Hoffmann A.,Joffre F.,Charles J.-P.

Affiliation:

1. LETI, CEA, Centre d'Etudes Nucleaires de Saclay, Gif-sur-Yvette, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/18599/00856492.pdf?arnumber=856492

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors;Japanese Journal of Applied Physics;2018-03-05

2. A review of pulsed NBTI in P-channel power VDMOSFETs;Microelectronics Reliability;2018-03

3. Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress;IEEE Transactions on Nuclear Science;2017-10

4. Experimental Investigation of NBTI Degradation in Power VDMOS Transistors Under Low Magnetic Field;IEEE Transactions on Device and Materials Reliability;2017-03

5. On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs;IEEE Transactions on Device and Materials Reliability;2016-12

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