A 29.5 dBm Class-E Outphasing RF Power Amplifier With Efficiency and Output Power Enhancement Circuits in 45nm CMOS
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8919/7992992/07956274.pdf?arnumber=7956274
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems;Micromachines;2023-08-01
2. A CMOS Wideband Watt-Level 4096-QAM Digital Power Amplifier Using Reconfigurable Power-Combining Transformer;IEEE Journal of Solid-State Circuits;2023-02
3. A 40% PAE and 34dBm Peak OIP3 CMOS Power Amplifier with Integrated Zero Power Consumption Phase Linearizer;Journal of Circuits, Systems and Computers;2023-01-11
4. An Outphasing Power Amplifier Based on Voltage-Current Combiner and Dynamic Power Control;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
5. Design of a K-Band High-Efficiency Power Amplifier in 45 nm SOI CMOS Technology;Integrated Ferroelectrics;2021-06-13
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