The Design of an Operational Amplifier Using Silicon Carbide JFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/8919/6139305/06019027.pdf?arnumber=6019027
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Method for Reducing the Zero Level of Gallium-Arsenide Operational Amplifiers Based on “Folded” Cascodes without Current Mirrors;2024 Conference of Young Researchers in Electrical and Electronic Engineering (ElCon);2024-01-29
2. 500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits;IEEE Electron Device Letters;2017-10
3. Normally-on 4H-SiC Vertical Junction Field Effect Transistor (VJFET): Design and Analysis Using TCAD Simulation;Materials Today: Proceedings;2015
4. A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology;IEEE Electron Device Letters;2014-07
5. A SiC NMOS Linear Voltage Regulator for High-Temperature Applications;IEEE Transactions on Power Electronics;2014-05
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