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Design of Low-Noise $K$-Band SiGe Bipolar VCOs: Theory and Implementation

  • Published:2015-02 Issue:2 Volume:62 Page:607-615
  • ISSN:1549-8328
  • Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
  • language:
  • Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Padovan Fabio,Tiebout Marc,Mertens Koen L. R.,Bevilacqua Andrea,Neviani Andrea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

2. Low Phase Noise and Low Power Consumption Magnetic Cross-Coupled Push-Push VCO in SiGe BiCMOS Technology;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. A 28-GHz Low Phase Noise Class-C Transformer VCO With 187-dBc/Hz FoM in 90-nm SiGe BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2023-10

4. Evaluation and Analysis of High Temperature Characteristics of 94 GHz SiGe BiCMOS PLL;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-10

5. Varactor Diode Tunability Enhancement by Means of a Non-Foster Negative Capacitor on Linvill’s NIC;2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2023-08-14
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