Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM-Reference-Cited by-同舟云学术

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Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM

Published:2015-06 Issue:6 Volume:62 Page:1555-1563
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Jeong Hanwool,Kim Taewon,Kang Kyoman,Song Taejoong,Kim Gyuhong,Won Hyo-sig,Jung Seong-Ook

Funder

Samsung Electronics [High-speed SRAM research & development project].

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/7112573/07112585.pdf?arnumber=7112585

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation hardened 11T memory cell for space applications;Microprocessors and Microsystems;2023-10

2. An efficient common source sense amplifier for single ended SRAM;Memories - Materials, Devices, Circuits and Systems;2023-10

3. A Switching NMOS Based Single Ended Sense Amplifier for High Density SRAM Applications;ACM Transactions on Design Automation of Electronic Systems;2023-03-19

4. Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits;Micromachines;2023-02-28

5. Reliability improved dual driven feedback 10T SRAM bit cell;Microelectronics Reliability;2022-12

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