High-performance Ka-band and V-band HEMT low-noise amplifiers-Reference-Cited by-同舟云学术

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High-performance Ka-band and V-band HEMT low-noise amplifiers

Published:1988-12 Issue:12 Volume:36 Page:1598-1603
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Duh K.H.G.,Pane-Chane Chao ,Smith P.M.,Lester L.F.,Lee B.R.,Ballingall J.M.,Ming-Yih Kao

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/632/00017390.pdf?arnumber=17390

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator;Materials;2021-02-18

2. A 22-GHz-band low-noise down-converter for satellite broadcast receivers;IEEE Transactions on Microwave Theory and Techniques;1991-06

3. d.c.- and r.f.-characterisation of conventional and superlattice heterostructure field-effect transistors at low temeperatures;Solid-State Electronics;1990-11

4. DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics;IEEE Transactions on Electron Devices;1990

5. Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz;IEEE Electron Device Letters;1989-09

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