3D Stackable Cryogenic InGaAs HEMT-Based DC and RF Multiplexer/Demultiplexer for Large-Scale Quantum Computing
Author:
Affiliation:
1. School of Electrical Engineering,KAIST,Daejeon,Korea
2. Korea Advanced Nano Fab Center (KANC),Suwon,Korea
3. Korea Basic Science Institute (KBSI),Daejeon,Korea
Funder
National Research Foundation
Korea Basic Science Institute
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019363.pdf?arnumber=10019363
Reference17 articles.
1. Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
2. A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K;IEEE Transactions on Electron Devices;2024-05
2. Research on High-integrated Low-latency Superconducting Quantum Readout System;2023 IEEE 7th Information Technology and Mechatronics Engineering Conference (ITOEC);2023-09-15
3. Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM;AIP Advances;2023-05-01
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