Highly reliable STT-MRAM adopting advanced MTJs with controlled domain wall pinning-Reference-Cited by-同舟云学术

Highly reliable STT-MRAM adopting advanced MTJs with controlled domain wall pinning

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Park J.-H.¹,Kim J. H.¹,Kim J. M.¹,Kim J.¹,Apalkov D.¹,Okada A.²,Sato H.¹,Jeong J. H.¹,Cho Y. J.¹,Pi U.¹,Kim Y.¹,Park Y. S.¹,Song K. M.²,Kim K.²,Jeong D.-E.¹,Kim D. S.¹,Kim C.¹,Kim I.¹,Han S. H.³,Lee K.³,Lee J. H.³,Song Y. J.¹,Koh G. H.¹,Kuh B. J.¹,Lee J. M.¹,Song J. H.¹

Affiliation:

1. Semiconductor R&D Center, Samsung Electronics, Co. Ltd,Hwaseong,South Korea

2. Samsung Advanced Institute of Technology, Samsung Electronics Co. Ltd,Suwon,South Korea

3. Foundry Business, Samsung Electronics Co. Ltd,Kiheung,South Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019352.pdf?arnumber=10019352

Reference8 articles.

1. 28-nm 0.08mm2/Mb Embedded MRAM for Frame Buffer Memory;han;IEDM Tech Dig,2020

2. 22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications

3. Switching Distributions for Perpendicular Spin-Torque Devices Within the Macrospin Approximation

4. A novel integration of STT-MRAM for on-chip hybrid memory by utilizing non-volatility modulation

5. Energy barriers in magnetic random access memory elements

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning Magneto-Optic Kerr Effect Microscope for Inspection of MRAM Manufacturing;IEEE Transactions on Magnetics;2023-11

2. Transitioning eMRAM from Pilot Project to Volume Production;2023 IEEE International Test Conference (ITC);2023-10-07

3. Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03