AlN/β-Ga₂O₃ MOSHEMT as Biosensor
Author:
Affiliation:
1. Birla Institute of Technology & Science Pilani, Pilani Campus,Electrical & Electronics Engineering,Pilani,India
2. Indian Institute of Technology Guwahati,Centre for Nanotechnology,Guwahati,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10465672/10465684/10465995.pdf?arnumber=10465995
Reference17 articles.
1. Recent Trends in Nanomaterial-Based Biosensors for Point-of-Care Testing
2. The early history of the high electron mobility transistor (HEMT)
3. DC characteristic analysis of AlGaN/GaN HEMT and MOSHEMT
4. Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications
5. AlGaN/GaN biosensor—effect of device processing steps on the surface properties and biocompatibility
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