An 8Mb demonstrator for high-density 1.8V Phase-Change Memories

Author:

Bedeschi F.,Resta C.,Khouri O.,Buda E.,Costa L.,Ferraro M.,Pellizzer F.,Ottogalli F.,Pirovano A.,Tosi M.,Bez R.,Gastaldi R.,Casagrande G.

Publisher

Widerkehr and Associates

Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11

2. PreFlush: Lightweight Hardware Prediction Mechanism for Cache Line Flush and Writeback;2023 32nd International Conference on Parallel Architectures and Compilation Techniques (PACT);2023-10-21

3. PM-based Persistent Key Value Stores: a Survey;2022 5th International Conference on Data Science and Information Technology (DSIT);2022-07-22

4. A Voltage-Controlled Gain Cell Magnetic Memory;IEEE Electron Device Letters;2021-10

5. Current Tracking Technique Enabling 1-Bit/Cell Storage in Ge-Rich Phase Change Memory;IEEE Transactions on Circuits and Systems II: Express Briefs;2019-10

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