Design of a sense circuit for low-voltage flash memories
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/4/18873/00871317.pdf?arnumber=871317
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Power Efficient Sense Amplifier For Emerging Non Volatile Memories;2020 33rd International Conference on VLSI Design and 2020 19th International Conference on Embedded Systems (VLSID);2020-01
2. Low-Power Code Memory Integrity Verification Using Background Cyclic Redundancy Check Calculator Based on Binary Code Inversion Method;Journal of Circuits, Systems and Computers;2016-04-22
3. An Asymmetric-Voltage-Biased Current-Mode Sensing Scheme for Fast-Read Embedded Flash Macros;IEEE Journal of Solid-State Circuits;2015-09
4. A Low-Voltage Sense Amplifier for Embedded Flash Memories;IEEE Transactions on Circuits and Systems II: Express Briefs;2015-03
5. A Sense Amplifier for Low Voltage Embedded Flash Memories;Advanced Materials Research;2014-07
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