Author:
Al-Bayati A.,Tandon S.,Doherty R.,Murrell A.,Wagner D.,Foad M.,Adibi B.,Mickevicius R.,Menisilenko V.,Simeonov S.,Jian A.,Sing D.,Ferguson C.,Murto R.,Larson L.
Cited by
2 articles.
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1. Formation of Ultra-Shallow Junctions;Reference Module in Materials Science and Materials Engineering;2016
2. Transistor sensitivity to energy contamination from decelerated BF/sub 2/ and As ion implantation;2003 5th International Conference on ASIC. Proceedings (IEEE Cat. No.03TH8690)