Extraction method of the base series resistances in bipolar transistor in presence of current crowding
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx1/4/10372/00485876.pdf?arnumber=485876
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Single Transistor-Based Methods for Determining the Base Resistance in SiGe HBTs: Review and Evaluation Across Different Technologies;IEEE Transactions on Electron Devices;2016-12
2. A New Method for Extracting Base Resistance in Bipolar Transistors;IEEE Transactions on Electron Devices;2005-04
3. Noise analysis of NPN SOI bipolar transistors for the design of charge measuring systems;IEEE Transactions on Nuclear Science;2004-06
4. Reducing the current crowding effect in bipolar transistors by tunnel diode emitter design;Solid-State Electronics;2003-01
5. Physics and Modeling of Bipolar Junction Transistors;High-Frequency Bipolar Transistors;2003
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