Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology-Reference-Cited by-同舟云学术

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Extreme Temperature (> 200 °C), Radiation Hard (> 1 Mrad), Dense (sub-50 nm CD), Fast (2 ns write pulses), Non-Volatile Memory Technology

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Memory Workshop (IMW)
language:
Short-container-title:

Author:

Suryavanshi Saurabh V.¹,Yeric Greg²,Irby Max³,Huang X. M. Henry⁴,Rosendale Glen⁵,Shifren Lucian⁶

Affiliation:

1. Cerfe Labs,Clovis,CA,USA

2. Cerfe Labs,Austin,TX,USA

3. Cerfe Labs,Dallas,TX,USA

4. Cerfe Labs,Cupertino,CA,USA

5. Cerfe Labs,Palo Alto,CA,USA

6. Cerfe Labs,San Jose,CA,USA

Funder

AFRL

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779251.pdf?arnumber=9779251

Reference5 articles.

1. Universal Non-Power Switching in Carbon-Doped Transition Metal Oxides (TMO) and Post TMO;de araujo;Review,2022

2. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

3. Device characterization of correlated electron random access memories

4. High temperature electronics using SiC: actual situation and unsolved problems

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

2. Test Methodology Development for Investigating CeRAM at Elevated Temperatures;2023 35th International Conference on Microelectronic Test Structure (ICMTS);2023-03-27

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