From Emergence to Prevalence: 22FDX® Embedded STT-MRAM-Reference-Cited by-同舟云学术

From Emergence to Prevalence: 22FDX® Embedded STT-MRAM

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Memory Workshop (IMW)
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Author:

Muller Johannes¹,Titova Aleksandra¹,Yoon Hongsik¹,Merbeth Thomas¹,Weisheit Martin¹,Wolf Georg¹,Bharali Sanjeeb¹,Pfefferling Bert¹,Otani Yuichi¹,Shapoval Tetyana²,Cagliani Alberto²,Vajda Ferenc²,Sadeghi Pedram²,Grimm Christiana Villas-Boas¹,Krause Frank¹,Altendorf Ines¹,Congedo Gabriele¹,Binder Robert¹,Metzger Joachim¹,Lajn Alexander¹,Langner Markus¹,You Young Seon¹,Kallensee Oliver¹,Naik Vinayak B.¹,Yamane Kazutaka¹,Soss Steven¹

Affiliation:

1. GlobalFoundries,Germany

2. KLA,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779310.pdf?arnumber=9779310

Reference10 articles.

1. Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling;worledge;Applied Physics Letters,2003

2. Manufacturable 300 mm platform solution for field-free switching SOT-MRAM;garello;Proc IEEE Symp VLSI Technol,2019

3. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

4. Line of Defense Strategies for Embedded 22FDX™ STT-MRAM High Volume Manufacturing;müller;IEEE International Conference on Magnetics Intermag,0

5. Breakthrough in current-in-plane tunneling measurement precision by application of multi-variable fitting algorithm

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