Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM-Reference-Cited by-同舟云学术

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Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM

Published:2010 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE International Reliability Physics Symposium
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Author:

Sierawski Brian D.,Warren Kevin M.,Reed Robert A.,Weller Robert A.,Mendenhall Marcus M.,Schrimpf Ronald D.,Baumann Robert C.,Zhu Vivian

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488796.pdf?arnumber=5488796

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Methodology to Estimate Single-Event Effects Induced by Low-Energy Protons;Eng;2024-02-19

2. Influence of 0.1–10 MeV neutron-induced SEUs on estimation of terrestrial SER in a nano-scale SRAM;AIP Advances;2023-11-01

3. Role of Elastic Scattering in Low-Energy Neutron-Induced SEUs in a 40-nm Bulk SRAM;IEEE Transactions on Nuclear Science;2022-05

4. 0.1–10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments;IEEE Transactions on Nuclear Science;2021-05

5. Impact of negative bias temperature instability on single event transients in scaled logic circuits;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-01-17

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