A 50 GHz broad-band monolithic GaAs/AlAs resonant tunneling diode trigger circuit
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx1/4/7045/00284711.pdf?arnumber=284711
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications;Journal of Semiconductors;2023-10-01
2. Fully Analytical Compact Model for the I-V Characteristics of Resonant Tunneling Diodes;2021 35th Symposium on Microelectronics Technology and Devices (SBMicro);2021-08-23
3. 10-Steps Method to Extract the I-V Curve of Resonant Tunneling Diode Based on Experimental Data Preserving Physical Parameters;Proceedings of the 4th Brazilian Technology Symposium (BTSym'18);2019
4. Non-noise instabilities in oscilloscope trigger circuits;Measurement Science and Technology;2011-03-15
5. Resonant Tunneling Diodes;Encyclopedia of RF and Microwave Engineering;2005-04-15
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