Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures-Reference-Cited by-同舟云学术

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Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

Published:2010-07 Issue:7 Volume:98 Page:1234-1248
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Hofstetter Daniel,Baumann Esther,Giorgetta Fabrizio Raphael,Théron Ricardo,Hong Wu ,Schaff William J,Dawlaty Jahan,George Paul A,Eastman Lester F,Rana Farhan,Kandaswamy Prem K,Guillot Fabien,Monroy Eva

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/5485026/05457982.pdf?arnumber=5457982

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV;Photonics;2023-08-07

2. Magneto-optical absorption and refraction changes of a bound polaron in a group II–VI asymmetric quantum well;Optical and Quantum Electronics;2021-04-28

3. Microwave Assisted ZnO Nanoparticles by Simple Precipitation Method: A Novel Approach;International Journal of Nanoscience;2020-12-16

4. Intersubband transitions in GaN-based heterostructures;Mid-infrared Optoelectronics;2020

5. Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths;Nanotechnology;2018-07-11

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