Sensitivity of Gate-All-Around Nanowire MOSFETs to Process Variations—A Comparison With Multigate MOSFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/4668541/04668589.pdf?arnumber=4668589
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Extraction of Drain Current Variability Components in Junctionless Nanowire Transistors;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17
3. Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-11
4. Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application;Microelectronics Journal;2023-07
5. Overcoming Embedded Memory Test & Repair Challenges in the Gate-All-Around Era;2023 IEEE 41st VLSI Test Symposium (VTS);2023-04-24
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