Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si nMOSFETs-Reference-Cited by-同舟云学术

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Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si nMOSFETs

Published:2008-09 Issue:9 Volume:55 Page:2386-2396
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Weber O.,Takagi S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4603161/04595628.pdf?arnumber=4595628

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