On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple $\delta$-Doped Sheets-Reference-Cited by-同舟云学术

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On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple $\delta$-Doped Sheets

Published:2008-11 Issue:11 Volume:55 Page:3310-3313
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Li-Yang,Cheng Shiou-Ying,Chen Tzu-Pin,Chu Kuei-Yi,Tsai Tsung-Han,Liu Yi-Chun,Liao Xin-Da,Liu Wen-Chau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4668541/04668600.pdf?arnumber=4668600

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors;Physica Scripta;2022-10-18

2. Doping-Dependent Nonlinear Electron Mobility in GaAs|InxGa1 –xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure;Semiconductors;2020-06-30

3. Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure;Physica Scripta;2020-02-25

4. Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET;Current Applied Physics;2013-10

5. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode;PLoS ONE;2012-11-30

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