Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology-Reference-Cited by-同舟云学术

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Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

Published:2008-11 Issue:11 Volume:55 Page:2813-2819
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar M. Jagadesh,Reed Mark A.,Amaratunga Gehan A. J.,Cohen Guy M.,Janes David B.,Lieber Charles M.,Meyyappan M.,Wernersson Lars-Erik,Wang Kang L.,Chau Robert S.,Kamins Theodore I.,Lundstrom Mark,Yu Bin,Zhou Chongwu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4668541/04668582.pdf?arnumber=4668582

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in SiC nanowire field-effect-transistors for integrated circuits and sensing applications;Microelectronic Engineering;2022-02

2. Theoretical prediction of novel ultrafine nanowires formed by Si12C12 cage-like clusters;The European Physical Journal D;2014-02

3. Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device;IEEE Transactions on Electron Devices;2012-04

4. SiC nanowires: material and devices;Journal of Physics D: Applied Physics;2011-03-16

5. Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics;Transactions on Electrical and Electronic Materials;2010-06-25

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