Refinement of Unified Random Access Memory-Reference-Cited by-同舟云学术

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Refinement of Unified Random Access Memory

Published:2009-04 Issue:4 Volume:56 Page:601-608
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ryu Seong-Wan,Han Jin-Woo,Kim Chung-Jin,Choi Sung-Jin,Kim Sungho,Kim Jin-Soo,Kim Kwang Hee,Oh Jae-Sub,Song Meyong-Ho,Lee Gi-Sung,Park Yun Chang,Kim Jeoung Woo,Choi Yang-Kyu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4805023/04773241.pdf?arnumber=4773241

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TID response of PD-SOI FinFET with high-k isolation;2022 IEEE 19th India Council International Conference (INDICON);2022-11-24

2. Demonstration of an UltraLow Energy PD-SOI FinFET Based LIF Neuron for SNN;IEEE Transactions on Nanotechnology;2022

3. MOCVD Al Nanocrystals Embedded in AlOxNyThin Films for Nonvolatile Memory;ECS Journal of Solid State Science and Technology;2012

4. Investigation of Isolation-Dielectric Effects of PDSOI FinFET on Capacitorless 1T-DRAM;IEEE Transactions on Electron Devices;2009-12

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