Investigation of Metallized Source/Drain Extension for High-Performance Strained NMOSFETs-Reference-Cited by-同舟云学术

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Investigation of Metallized Source/Drain Extension for High-Performance Strained NMOSFETs

Published:2008-11 Issue:11 Volume:55 Page:3221-3226
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Tzu-Juei,Ko Chih-Hsin,Lin Hong-Nien,Chang Shoou-Jinn,Wu San-Lein,Kuan Ta-Ming,Lee Wen-Chin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4668541/04668592.pdf?arnumber=4668592

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Environmental Impact of Nanotechnology and Novel Applications of Nano Materials and Nano Devices;Advanced Structured Materials;2019

2. Temperature dependence of low-frequency noise characteristics in uniaxial tensile strained nMOSFETs;Japanese Journal of Applied Physics;2015-09-03

3. Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain;Journal of Nanomaterials;2014

4. Temperature Dependence of Electrical Characteristics of Strained nMOSFETs Using Stress Memorization Technique;IEEE Electron Device Letters;2011-07

5. Interaction of NiSi with dopants for metallic source/drain applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01

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