A New Method to Extract Mobility Degradation and Parasitic Series Resistance of Nano-scaled MOSFETs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A New Method to Extract Mobility Degradation and Parasitic Series Resistance of Nano-scaled MOSFETs

Published:2021-11-24 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
language:
Short-container-title:

Author:

Yang Zixuan,Xie Qian,He Qiao,Zhao Meng,Wang Zheng

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9661584/9661598/09661623.pdf?arnumber=9661623

Reference6 articles.

1. A review of electrical characterization techniques for ultrathin FDSOI materials and devices

2. A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs

3. Low ballistic mobility in submicron HEMTs

4. MOSFET channel length: extraction and interpretation

5. A new method to determine MOSFET channel length

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parameter extraction in a 65nm nMOSFET technology from 300 K down to 3.8 K;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP