A High Power-Added-Efficiency Ku-band Frequency Doubler in 28-nm CMOS for Automotive Radar-Reference-Cited by-同舟云学术

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A High Power-Added-Efficiency Ku-band Frequency Doubler in 28-nm CMOS for Automotive Radar

Published:2021-11-24 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
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Author:

Wang Changwei,Pan Dongfang,Duan Zongming,Deng Biao,Sun Liguo

Funder

China Postdoctoral Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9661584/9661598/09661648.pdf?arnumber=9661648

Reference7 articles.

1. A 19.5% Efficiency 51–73-GHz High-Output Power Frequency Doubler in 65-nm CMOS

2. 77 GHz phase-locked loop for automobile radar system in 90 nm CMOS technology

3. Injection-Locked CMOS Frequency Doublers for $\mu$-Wave and mm-Wave Applications

4. Truly Balanced K-Band Push-Push Frequency Doubler

5. A High Gain, High Power K-Band Frequency Doubler in 0.18 $\mu{\rm m}$ CMOS Process

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