Author:
Bryant A.,Haensch W.,Geissler S.,Mandelman J.,Poindexter D.,Steger M.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
28 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. BSIM-BULK Real Device Effect Models;BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-voltage;2023
2. Modeling of TID-induced leakage current in ultra-deep submicron SOI NMOSFETs;Microelectronics Journal;2020-08
3. BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design;2019 IEEE Custom Integrated Circuits Conference (CICC);2019-04
4. Modeling STI Edge Parasitic Current for Accurate Circuit Simulations;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2015-08
5. Localization of temperature sensitive areas on analog circuits;Microelectronics Journal;2014-06