Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films-Reference-Cited by-同舟云学术

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Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films

Published:2020-07 Issue: Volume: Page:
ISSN:
Container-title:2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)
language:
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Author:

Fichtner Simon,Lofink Fabian,Wagner Bernhard,Schonweger Georg,Kreutzer Tom-Niklas,Petraru Adrian,Kohlstedt Hermann

Funder

German Federal Ministry of Education and Research (BMBF)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9215568/9234808/09234883.pdf?arnumber=9234883

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New-Generation Ferroelectric AlScN Materials;Nano-Micro Letters;2024-06-25

2. Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT;Semiconductor Science and Technology;2024-06-06

3. Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0.2Al0.45Ga0.35N;Applied Physics Letters;2024-05-06

4. A scalable ferroelectric non-volatile memory operating at 600 °C;Nature Electronics;2024-04-29

5. Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities;Applied Physics Letters;2024-04-08

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