Near-Field Analysis of VCSELs After HTOL Test
Author:
Affiliation:
1. Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan,10617
2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University,Taipei,Taiwan,10617
Funder
Ministry of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10431815/10431907/10432261.pdf?arnumber=10432261
Reference6 articles.
1. A NRZ-OOK Modulated 850-nm VCSEL with 54 Gb/s Error-Free Data Transmission
2. High thermal stability of 850 nm VCSELs with enhanced mask margin up to 85 °C for 100G-SR4 Operation
3. Recent Advances in 850 nm VCSELs for High-Speed Interconnects
4. Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser
5. Electrical and physical failure analysis techniques for oxide aperture delineation in high-power oxide-confined VCSEL arrays
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