Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Source Design of Vertical III–V Nanowire Tunnel Field-Effect Transistors

Published:2024 Issue: Volume:10 Page:8-12
ISSN:2329-9231
Container-title:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
language:
Short-container-title:IEEE J. Explor. Solid-State Comput. Devices Circuits

Author:

Rangasamy Gautham¹^ORCID,Zhu Zhongyunshen¹^ORCID,Wernersson Lars-Erik¹^ORCID

Affiliation:

1. Department of Electrical and Information Technology, Lund University, Lund, Sweden

Funder

Swedish Research Council

European Union H2020 program SEQUENCE

European Research Council

Dynamic Properties of Ferroelectric III-V MOSFETs

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6570653/10432974/10409158.pdf?arnumber=10409158

Reference25 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. Toward attojoule switching energy in logic transistors

3. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

4. InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

5. Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs-on-insulator based vertical heterojunction tunnel FET: proposal and analysis for VLSI circuit applications;Physica Scripta;2024-07-24

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP