A High-Parallelism RRAM-Based Compute-In-Memory Macro With Intrinsic Impedance Boosting and In-ADC Computing-Reference-Cited by-同舟云学术

A High-Parallelism RRAM-Based Compute-In-Memory Macro With Intrinsic Impedance Boosting and In-ADC Computing

Published:2023-06 Issue:1 Volume:9 Page:38-46
ISSN:2329-9231
Container-title:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
language:
Short-container-title:IEEE J. Explor. Solid-State Comput. Devices Circuits

Author:

Xie Tian¹^ORCID,Yu Shimeng²^ORCID,Li Shaolan¹

Affiliation:

1. Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. Georgia Institute of Technology, Atlanta, GA, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/6570653/10138050/10070378.pdf?arnumber=10070378

Reference43 articles.

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2. A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors

3. High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS

4. Analog-to-Digital Converter Design Exploration for Compute-in-Memory Accelerators

5. A fully integrated analog ReRAM based 78.4 TOPS/W compute-in-memory chip with fully parallel MAC computing;liu;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2020

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