Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array-Reference-Cited by-同舟云学术

Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array

Published:2019-12 Issue:2 Volume:5 Page:103-112
ISSN:2329-9231
Container-title:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
language:
Short-container-title:IEEE J. Explor. Solid-State Comput. Devices Circuits

Author:

Reis Dayane^ORCID,Datta Suman^ORCID,Niemier Michael T.^ORCID,Hu Xiaobo Sharon^ORCID,Ni Kai^ORCID,Chakraborty Wriddhi^ORCID,Yin Xunzhao^ORCID,Trentzsch Martin,Dunkel Stefan,Melde Thomas,Muller Johannes,Beyer Sven

Funder

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/6570653/8979191/08768343.pdf?arnumber=8768343

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