IGZO CIM: Enabling In-Memory Computations Using Multilevel Capacitorless Indium–Gallium–Zinc–Oxide-Based Embedded DRAM Technology-Reference-Cited by-同舟云学术

IGZO CIM: Enabling In-Memory Computations Using Multilevel Capacitorless Indium–Gallium–Zinc–Oxide-Based Embedded DRAM Technology

Published:2022-06 Issue:1 Volume:8 Page:35-43
ISSN:2329-9231
Container-title:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
language:
Short-container-title:IEEE J. Explor. Solid-State Comput. Devices Circuits

Author:

Sundara Raman Siddhartha Raman¹^ORCID,Xie Shanshan¹^ORCID,Kulkarni Jaydeep P.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA

Funder

The University of Texas at Austin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/6570653/9903013/09815041.pdf?arnumber=9815041

Reference23 articles.

1. Haswell: A Family of IA 22 nm Processors

2. 3D-stacked CAAC-In-Ga-Zn oxide FETs with gate length of 72 nm;oota;IEDM Tech Dig,2019

3. Compute-in-eDRAM with Backend Integrated Indium Gallium Zinc Oxide Transistors

4. Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

5. Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating >10³s retention, >10¹¹ cycles endurance and LG scalability down to 14 nm;belmonte;IEDM Tech Dig,2021

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