Physical Insights Into the Nature of Gate-Induced Drain Leakage in Ultrashort Channel Nanowire FETs-Reference-Cited by-同舟云学术

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Physical Insights Into the Nature of Gate-Induced Drain Leakage in Ultrashort Channel Nanowire FETs

Published:2017-06 Issue:6 Volume:64 Page:2604-2610
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sahay Shubham^ORCID,Kumar Mamidala Jagadesh^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7929292/07891957.pdf?arnumber=7891957

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of varying channel length on Analog/RF performances in a novel n-type silicon-based DG-JLT;Micro and Nanostructures;2024-09

2. Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET;Microelectronics Journal;2024-04

3. Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures;Solid-State Electronics;2024-04

4. Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM;IEEE Transactions on Electron Devices;2024-04

5. Junction‐Less Field Effect Transistors;75th Anniversary of the Transistor;2023-07-03

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