Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping
Author:
Funder
National Science Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7906638/07885604.pdf?arnumber=7885604
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation;Micromachines;2022-01-10
2. Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness;ECS Journal of Solid State Science and Technology;2020-06-15
3. Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs;Scientific Reports;2020-03-04
4. Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs;Vacuum;2019-08
5. Co-sputtering Co–Ti alloy as a single barrier/liner for Co interconnects and thermal stability enhancement using TiN metal capping;Journal of Materials Science: Materials in Electronics;2019-05-03
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