High-Performance Single-Electron Transistor Based on Metal–Organic Complex of Thiophene: First Principle Study-Reference-Cited by-同舟云学术

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High-Performance Single-Electron Transistor Based on Metal–Organic Complex of Thiophene: First Principle Study

Published:2017-11 Issue:11 Volume:64 Page:4628-4635
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Anu ^ORCID,Sharma Archana^ORCID,Khan Md. Shahzad,Srivastava Anurag^ORCID,Husain Mushahid,Khan Mohd. Shahid^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8076920/08059845.pdf?arnumber=8059845

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Carbon & boron substituted-Dibenzo[1,4]azaborinine as a quantum dot-based organic molecular single-electron device for high switching speed applications;Materials Today: Proceedings;2022

3. Analysis of single electron transistor using switched capacitor filter;Materials Today: Proceedings;2021

4. A complete set of logic gates with an identical single-stage structure based on periodic nature of single-electron devices;Journal of Computational Electronics;2020-09-27

5. DFT Analysis of Vanadium Tris(Dithiolene)-Based Double-Gated Single-Electron Transistor;Journal of Electronic Materials;2020-04-13

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