High-Power ${X}$ -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic-Reference-Cited by-同舟云学术

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High-Power ${X}$ -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic

Published:2017-09 Issue:9 Volume:64 Page:3627-3633
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Luo Weijun^ORCID,Liu Hui,Zhang Zongjing,Sun Pengpeng,Liu Xinyu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8011577/08002666.pdf?arnumber=8002666

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and Design of Shunt Resonator-Based Phase Shifters With Reduced Phase Error and In-Band Magnitude Ripple;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-07

2. A novel 6.5-13.5GHz 6-bit digital phase shifter with ultra low RMS phase error in 0.25-µm GaAs p-HEMT technology;IEICE Electronics Express;2024-05-10

3. Wideband, Electronically Reconfigurable, 0°/90° Phase Shifter for High-Power Microwave Phased Arrays;IEEE Transactions on Plasma Science;2024-04

4. X-Band Reconfigurable Phase Shifters Based on SIW and Liquid Metal Technologies;2024 18th European Conference on Antennas and Propagation (EuCAP);2024-03-17

5. A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique;Sensors;2024-02-07

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