Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise-Reference-Cited by-同舟云学术

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Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise

Published:2017-07 Issue:7 Volume:64 Page:2919-2926
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Both Thiago H.^ORCID,Croon Jeroen A.,Banaszeski da Silva Mauricio^ORCID,Tuinhout Hans P.,Scholten Andries J.,Zegers-van Duijnhoven Adrie,Wirth Gilson I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7945326/07935533.pdf?arnumber=7935533

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Telegraph Noise in Analog CMOS Circuits;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-06

2. Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators;IEEE Journal of the Electron Devices Society;2022

3. The observation window and the statistical modeling of RTN in time and frequency domain;Solid-State Electronics;2021-12

4. Towards Unifying the Statistical Modeling of Charge Trapping in Time and Frequency Domain;2021 IEEE Latin America Electron Devices Conference (LAEDC);2021-04-19

5. Unified Compact Modeling of Charge Trapping in 1/f Noise, RTN and BTI;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08

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