Skewed Straintronic Magnetotunneling-Junction-Based Ternary Content-Addressable Memory

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Skewed Straintronic Magnetotunneling-Junction-Based Ternary Content-Addressable Memory—Part II

Published:2017-07 Issue:7 Volume:64 Page:2842-2848
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Manasi Susmita Dey^ORCID,Al-Rashid Md Mamun,Atulasimha Jayasimha,Bandyopadhyay Supriyo^ORCID,Trivedi Amit Ranjan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7945326/07940038.pdf?arnumber=7940038

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploiting Programmable Dipole Interaction in Straintronic Nanomagnet Chains for Ising Problems;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

2. Novel Memristor-based Energy Efficient Compact 5T4M Ternary Content Addressable Memory;2022 25th International Conference on Computer and Information Technology (ICCIT);2022-12-17

3. The Many Facets of Nanotechnology [Highlights];IEEE Nanotechnology Magazine;2020-08

4. Straintronics: Digital and Analog Electronics With Strain-Switched Nanomagnets;IEEE Open Journal of Nanotechnology;2020

5. Review: Voltage induced strain control of magnetization: computing and other applications;Multifunctional Materials;2019-09-10

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