Delamination between dielectric layers of FOPLP due to copper residue under high temperature storage conditions
Author:
Affiliation:
1. Samsung Electronics,Test and System Package Division,On-yang,Chungcheongnam-do,31489
2. Measurement & Analysis Group, Samsung Electro-Mechanics,Suwon,Gyeonggi,Republic of Korea,16521
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10012686/10013085/10013189.pdf?arnumber=10013189
Reference25 articles.
1. Development of Novel Low-Temperature Curable Positive-Tone Photosensitive Dielectric Materials with High Reliability
2. Passivation Materials for a Reliable Fine Pitch RDL
3. Diffusion and oxidation of copper in polymer of Fan Out-Panel Level Package (FO-PLP) under High Temperature Storage (HTS) Conditions
4. Polymer surface treatment to reduce RDL leakage and solve delamination issue: YE: Yield enhancement/learning
5. Reduction of Leakage Current Along Polyimide Layers in Wafer Level Packaging
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