Tri-State Nanoelectromechanical Memory Switches for the Implementation of a High-Impedance State-Reference-Cited by-同舟云学术

Tri-State Nanoelectromechanical Memory Switches for the Implementation of a High-Impedance State

Published:2020 Issue: Volume:8 Page:202006-202012
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Baek Gwangryeol^ORCID,Yoon Jisoo^ORCID,Choi Woo Young^ORCID

Funder

National Research Foundation (NRF), South Korea, funded by Ministry of Science and ICT (MSIT) through the Intelligent Semiconductor Technology Development Program

Mid-Career Researcher Program

Nano-Material Technology Development Program

Institute for Information & Communications Technology Planning & Evaluation (IITP) funded by MSIT through the Information Technology Research Center Program

Ministry of Trade, Industry and Energy (MOTIE)/Korea Semiconductor Research Consortium (KSRC) through the Technology Innovation Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/6287639/8948470/09249244.pdf?arnumber=9249244

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