Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System-Reference-Cited by-同舟云学术

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Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

Published:2020 Issue: Volume:8 Page:192304-192311
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Jang Jun Tae^ORCID,Min Jungi,Hwang Yeongjin,Choi Sung-Jin^ORCID,Kim Dong Myong^ORCID,Kim Hyungjin^ORCID,Kim Dae Hwan^ORCID

Funder

NRF

Korean government

Brain Korea 21 Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/6287639/8948470/09229402.pdf?arnumber=9229402

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition;Nano Energy;2024-10

2. Resistive switching of IGZO-based memristors with electrode modulation and multi-value storage application;Applied Physics A;2024-08

3. Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO₂-Based Memristive Devices;ACS Omega;2024-05-26

4. Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse;Small Structures;2024-04-03

5. 1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature;ACS Applied Materials & Interfaces;2024-03-27

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