Design-Window Methodology for Inductorless Noise-Cancelling CMOS LNAs
Author:
Affiliation:
1. Group of Electronic Design (GDE), Universidad de Zaragoza, Zaragoza, Spain
2. Group of Electronic Design (GDE), Centro Universitario de la Defensa, Zaragoza, Spain
3. ICTEAM Institute, UCLouvain, Louvain-la-Neuve, Belgium
Funder
Spanish Ministerio de Economia Industria y Competitividad-European Regional Development Fund
Spanish Ministerio de Ciencia e Innovación
General Deputation of Aragon (DGA) Ph.D. Scholarship
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science
Link
http://xplorestaging.ieee.org/ielx7/6287639/9668973/09732422.pdf?arnumber=9732422
Reference23 articles.
1. A 0.044-mm2 0.5-to-7-GHz Resistor-Plus-Source-Follower-Feedback Noise-Cancelling LNA Achieving a Flat NF of 3.3±0.45 dB
2. Balun LNA Thermal Noise Analysis and Balancing With Common-Source Degeneration Resistor
3. Inductorless Multi-Mode RF-CMOS Low Noise Amplifier Dedicated to Ultra Low Power Applications
4. Design Methodology Based on the Inversion Coefficient and its Application to Inductorless LNA Implementations
5. A Highly Linear Broadband CMOS LNA Employing Noise and Distortion Cancellation
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3. Multi-Stage Low Noise Amplifier for RF Transceiver Front-End;2023 International Conference on Next Generation Electronics (NEleX);2023-12-14
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