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A 25.1 dBm 25.9-dB Gain 25.4% PAE X-band Power Amplifier Utilizing Voltage Combining Transformer in 65-nm CMOS

  • Published:2021 Issue: Volume:9 Page:6513-6521
  • ISSN:2169-3536
  • Container-title:IEEE Access
  • language:
  • Short-container-title:IEEE Access

Author:

Trinh Van-SonORCID,Park Jung-DongORCID

Funder

National Research Foundation of Korea (NRF) grant funded by the Korea governmen

Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 16.5-dBm D-Band Eight-Way Power Amplifier Utilizing Cascaded Transformers in 40-nm Bulk CMOS;IEEE Microwave and Wireless Technology Letters;2024-08

2. A 6 to 18 GHz flat high gain power amplifier using mismatch-consistent MCR technique in 40-nm CMOS;Microelectronics Journal;2024-01

3. Methodology to Design a CCF−1 Ku Band GaN MMIC PA with Nonlinear Output Capacitance;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

4. An X-Band Class-B Push-Pull Power Amplifier on a 0.25 μm SiGe-C Process;2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2023-12-04

5. Continuous Class F−1 Ku Band GaN MMIC Power Amplifier With an Effect of Nonlinear Output Capacitance;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-10
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